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        Page 2 QW-BB034 REV:B Comchip Technology CO., LTD. Rating and Characteristic Curves (CDBMH320-G Thru. CDBMH3100-G) Fig.2 - Typical Forward Characteristics I n s t a n t a n e o u s F o r w a r d C u r r e n t , ( A ) Forward Voltage, (V) .1 Fig.5 - Typical Reverse Characteristics R e v e r s e L e a k a g e C u r r e n t , ( m A ) Percent of Rated Peak Reverse Voltage, (%) 0 120 200 Fig.4 - Typical Junction Capacitance 0 J u n c t i o n C a p a c i t a n c e , ( p F ) Reverse V oltage, (V) 300 700 0.01 1 0.01 10 100 1.5 100 Fig.1 - Typical Forward Current 0 0 A v e r a g e F o r w a r d C u r r e n t , ( A ) Ambient Temperature, ( °C ) 2.0 1.5 0.1 140 80 0.01 1 10 100 0.1 0.3 0.5 0.9 1.1 100 400 600 1.0 40 80 160 1 40 100 2.5 3.0 =75 OC TJ =25 OC TJ 0.5 0.1 10 200 500 120 20 60 Fig.3 - Maximum Non-repetitive Forward Surge Current 0 P e a k F o r w a r d S u r g e C u r r e n t , ( A ) Number of Cycles at 60Hz 100 1 10 100 40 80 20 60 =25 OC TJ 8.3ms single half sine wave, JEDEC method SMD Schottky Barrier Rectifiers f=1MHz Applied 4VDC reverse voltage TJ=25°C Pulse Width 300uS 1% Duty Cycle 0.7 1.3 -40 G ~3- 20 G H3 BM G~3 60-G CD - 350MH -G~ 310 0-G BCD 8H3 0 BMCD 160 Derating Curve C D B M H 3 5 0 -G ~ C D B M H 3 1 0 0 -G C D B M H 3 2 0 -G ~ C D B M H 3 4 0 -G |